(5/5) based on 19 customer reviews
Description
NJD35N04G ,. NJVNJD35N04G,. NJVNJD35N04T4G. NPN Darlington Power. Transistor. This high voltage power Darlington has been specifically designed. Aug 29, 2012 MJW18020G. BUB323ZG. MJD50G. NJD35N04G . BUB323ZT4G. MJD50T4G. NJD35N04T4G. BUD42DT4G. MJE13007G. NJVMJD47T4G. Sep 16, 2010 NJD35N04G . MJD127T4G. MJD340G. NJD35N04T4G. MJD128T4G. MJD340T4G. MSRD620CTG. MJD148T4G. MJD350G. MSRD620CTT4G. 2013 9 24 MJD210G. MJD32CT4G. NJD35N04G . MJD340G. MJD32CG. MJD47T4G. MJD200T4G. MJD42CG. BUD42DT4G. MJD200RLG. MJD2955T4G. Aug 30, 2007 NJD35N04G . SJD31CT4G. MC79M12CDTRK. NJD35N04T4G. SJD32CT4. MC79M12CDTRKG. NJVMJD127T4. SJD32CT4G. MC79M15BDT.
| Part Number | NJD35N04G |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - Bipolar (BJT) - Single |
| Brand | NEC Electronics Inc |
| Description | TRANS NPN DARL 350V 4A DPAK |
| Series | - |
| Packaging | Tube |
| Transistor Type | NPN - Darlington |
| Current - Collector (Ic) (Max) | 4A |
| Voltage - Collector Emitter Breakdown (Max) | 350V |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 20mA, 2A |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 2A, 2V |
| Power - Max | 45W |
| Frequency - Transition | 90MHz |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | DPAK-3 |
| Image |  |
Hot Offer
NJD35N04G
NEC-TOKIN
10
4.7125
HK JDW ELECTRONIC CO., LIMITED
NJD35N04G
NECTOKIN
10
5.73
HK FEILIDI ELECTRONIC CO., LIMITED
NJD35N04G
NEC
750
1.66
Hong Kong Yulu International Limited
NJD35N04G
NEC/RENESAS
10
2.6775
Lansheng Technology Co.,Ltd.
NJD35N04G
NEC/TOKIN
35200
3.695
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
