NEC Electronics Inc

Description

DESCRIPTION. The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 3.2 V GSM 900 handsets. Page 1. Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge. Document No. PU10123EJ03V0DS UHF to 2GHz, the NE5520379A makes an ideal transmission power amplifier for cell phones, special mobile radios, pagers, and fixed wireless transceivers. Apr 1, 2010 The NE5520379A is an N-channel silicon power MOS FET specially designed as the Part number for sample order: NE5520379A NE5520379A . LDMOS Discrete, +35dBm. Drivers. NESG270034. SiGe Discrete, +31 33.5 dBm. NESG260234. SiGe Discrete, +30dBm. NESG250134.