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Description
HETERO JUNCTION FIELD EFFECT TRANSISTOR. NE3517S03 . K-BAND SUPER LOW NOISE AMPLIFIER. N-CHANNEL GaAs HJ-FET. Document No. Apr 1, 2010 Part number for sample order: NE3517S03 . ABSOLUTE MAXIMUM RATINGS ( TA = +25 C). Parameter. Symbol. Ratings. Unit. Drain to Source Jul 14, 2010 NE3517S03 GaAs Field Effect Transistor (FET). The new FET has been redesigned with an ultra low cost plastic package, driving down costs to NE3517S03 -A. July 2024. NE3517S03 . NE3517S03 -T1C-A. July 2024. NE3517S03 . NE3517S03 -T1D-A. July 2024. NE3520S03. NE3520S03-A. July 2024. 2013 7 4 UPC3228T5S-E2-A. NE3516S02-T1D-A. UPD5739T7A-E1-A. NE3517S03 -T1D- A. UPD5754T7A-E1-A. NE3520S03-T1D-A. UPC3243T7A-E1-
| Part Number | NE3517S03 |
| Brand | NEC Electronics Inc |
| Image |  |
NE3517S03
NEC
8699
0.09
AoHoo Enterprise (HongKong) Co., Limited
NE3517S03
NEC/RENESAS
5150
0.8875
Top Electronics Co.,
NE3517S03
NEC/TOKIN
5000
1.685
Ande Electronics Co., Limited
NE3517S03
NEC-TOKIN
57
2.4825
FLOWER GROUP(HK)CO.,LTD
NE3517S03-A
NECTOKIN
1325
3.28
Nosin (HK) Electronics Co.
