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Description
HETERO JUNCTION FIELD EFFECT TRANSISTOR. NE3503M04 . C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER. N-CHANNEL HJ-FET. S-PARAMETERS. S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form. (S2P) that enables direct NE3210S01. CE3512K2. NE3210S01-T1B. CE3512K2-C1. NE3503M04 -A. CE3514M4. NE3503M04 -T2-A. CE3514M4-C2. NE3503M04 -T2B-A. CE3514M4- C2. 2010 4 1 2010 4 1 NEC . NE3503M04 -A. July 2024. NE3503M04 . NE3503M04 -T2-A. July 2024. NE3503M04 . NE3503M04 -T2B-A. July 2024. NE3508M04. NE3508M04-07-A. July 2024.
| Part Number | NE3503M04 |
| Brand | NEC Electronics Inc |
| Image |  |
NE3503M04
NEC
5692
1.13
Dedicate Electronics (HK) Limited
NE3503M04
NEC/RENESAS
5000000
1.93
Hongkong Shengshi Electronics Limited
NE3503M04
NEC/TOKIN
30000
2.73
HK HEQING ELECTRONICS LIMITED
NE3503M04
NEC-TOKIN
64818
3.53
N&S Electronic Co., Limited
NE3503M04
NECTOKIN
192975
4.33
Cicotex Electronics (HK) Limited
