(4/5) based on 16 customer reviews
Description
The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it Jul 1, 2004 NECs NE3210S01 is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AIGaAs and undoped. InGaAs to create NE3210S01 . CE3512K2. NE3210S01 -T1B. CE3512K2-C1. NE3503M04-A. CE3514M4. NE3503M04-T2-A. CE3514M4-C2. NE3503M04-T2B-A. CE3514M4- C2. Radar Detector. FIRST STAGE. Low Noise GaAs FETs: NE3505M04. NE3210S01 . SECOND STAGE. Silicon Bipolar Transistor: NE662M04. SiGe Transistor:. Aug-00. NE3210S01 -T1B. SSGAFETS. NE42484A. D. Mar-00. NE3210S01 . SSGAFETS. NE42484A-T1A. D. Mar-00. NE3210S01 -T1B. SSGAFETS. NE428M01.
| Part Number | NE3210S01 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - RF |
| Brand | NEC Electronics Inc |
| Description | FET RF 4V 12GHZ S01 |
| Series | - |
| Packaging | Cut Strip |
| Transistor Type | HFET |
| Frequency | 12GHz |
| Gain | 13.5dB |
| Voltage - Test | 2V |
| Current Rating | 15mA |
| Noise Figure | 0.35dB |
| Current - Test | 10mA |
| Power - Output | - |
| Voltage - Rated | 4V |
| Package / Case | 4-SMD |
| Supplier Device Package | SMD |
| Image |  |
NE3210S01
NEC
192948
0.59
Cicotex Electronics (HK) Limited
NE3210S01
NEC/RENESAS
5264
1.535
Top Electronics Co.,
NE3210S01
NEC/TOKIN
10100
2.48
FLOWER GROUP(HK)CO.,LTD
NE3210S01
NEC-TOKIN
1570
3.425
WIN AND WIN ELECTRONICS LIMITED
NE3210S01
NECTOKIN
27500
4.37
KST Components Limited
