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Description
7. 1. Publication Order Number: MJE15028/D. MJE15028, MJE15030 (NPN),. MJE15029 , MJE15031 (PNP). Complementary Silicon. Plastic Power Transistors. CP645- MJE15029 . PNP - Power Transistor Die. 8.0 Amp, 120 Volt. MECHANICAL SPECIFICATIONS: Die Size. 120 x 145 MILS. Die Thickness. 12.5 MILS. VCEO(sus) = 120 Vdc (Min) MJE15028, MJE15029 . VCEO(sus) = 150 Vdc (Min) - MJE15030, MJE15031. High Current Gain - Bandwidth Product. fT = 30 MHz Apr 25, 2003 DESCRIPTION AND PURPOSE: This is an initial notification. ON Semiconductor wishes to notify its Customers that some Bipolar. Jul 31, 2001 Final Product/Process Change Notification (FPCN) - Final Notification completing the notification process. Distributed at least 60 days from the
| Part Number | MJE15029 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - Bipolar (BJT) - Single |
| Brand | NEC Electronics Inc |
| Description | TRANS PNP 120V 8A TO220AB |
| Series | - |
| Packaging | Tube |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 8A |
| Voltage - Collector Emitter Breakdown (Max) | 120V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 4A, 2V |
| Power - Max | 50W |
| Frequency - Transition | 30MHz |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220AB |
| Image |  |
MJE15029
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