Description
The MBRD1035CTL employs the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheeling diode and polarity
Part Number | B1035CLG |
Brand | NEC Electronics Inc |
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B1035CLG
NEC
2603
1.53
LanKa Micro Electronic Co.,Limited
B1035CLG
NEC/RENESAS
2603
2.225
KDH SEMICONDUCTOR CO., LIMITED
B1035CLG
NEC/TOKIN
1855
2.92
HONG KONG IFUSON TECHNOLOGY CO., LIMITED
B1035CLG
NEC-TOKIN
10
3.615
Yingxinyuan INT'L (Group) Limited
B1035CLG
NECTOKIN
23603
4.31
N&S Electronic Co., Limited