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Description
Datasheet AO4914 . 30V Dual N-Channel MOSFET with Schottky Diode. General Description. Product The AO4914 uses advanced trench technology to provide. 2006 4 11 This AOS product reliability report summarizes the qualification result for AO4914 . Accelerated environmental tests are performed on a specific Vishay Siliconix. Si4914BDY. Document Number: 69654. S09-2109-Rev. E, 12- Oct-09 www.vishay.com. 1. Dual N-Channel 30-V (D-S) MOSFET with Schottky Mar 20, 2002 13-49-03264. VS. Richard Charles Mendel, M.D., . Docket No:b?( aO 49-14 . Respondent. CONSENT AGREEMENT AND ORDER. PARTIES. AO4914 . SO-8. Asymmetric. SMPS. N. No. No. 30. 20. 8.5. 6.5. 2. 1.3. 20.5. 28. 2.4. 730. 165. 82. 7.5. 3. 8. 8. AO4914 . SO-8. Asymmetric. SMPS. N. No. Yes. 1A.
| Part Number | AO4914 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | NEC Electronics Inc |
| Description | MOSFET 2N-CH 30V 8A |
| Series | - |
| Packaging | Tape & Reel (TR) |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8A |
| Rds On (Max) @ Id, Vgs | 20.5 mOhm @ 8A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 865pF @ 15V |
| Power - Max | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC |
| Supplier Device Package | 8-SO |
| Image |  |
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