(5/5) based on 5 customer reviews
Description
Apr 1, 2010 To our customers,. Old Company Name in Catalogs and Other Documents. On April 1st, 2010, NEC Electronics Corporation merged with 2010 4 1 . . 2010 4 1 NEC . 2SA812 -M4. PNP Silicon. Epitaxial Transistors. Features. High DC Current Gain: 90 hFE 600.(VCE=-6.0V, IC=-1mA). High voltage: VCEO=-50V. Maximum 2010 4 1 2SC1623A. 2SD596A. MOS FET. 2SJ461A. 2SK2158A. QN7002. A . 2SA812A-T1B-AT/JM. 2SA812 -T1B-A/JM. S Bi. R8C/33A . R8C/LAPS . POR *1. . . EEPROM. R1EX24xxx . R1EX25xxx . . . LCD. 2SA812 /2SC1623
| Part Number | 2SA812 |
| Brand | NEC Electronics Inc |
| Image |  |
2SA812
NEC
5000000
1.89
Hongkong Shengshi Electronics Limited
2SA812
NEC/RENESAS
30522
2.52
Sino Star Electronics (HK) Co.,Limited
2SA812
NEC/TOKIN
90000
3.15
Belt (HK) Electronics Co
2SA812
NEC-TOKIN
13000
3.78
Cicotex Electronics (HK) Limited
2SA812
NECTOKIN
38000
4.41
Yingxinyuan INT'L (Group) Limited
