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Description
DATASHEET 2N7002W . Document number: DS30099 Rev. 14 - 2. 1 of 4 www.diodes.com. September 2013. Diodes Incorporated. 2N7002W . N-CHANNEL 1. Publication Order Number: 2N7002W /D. 2N7002W , 2V7002W. Small Signal MOSFET. 60 V, 340 mA, Single, N Channel, SC 70. Features. ESD Protected. 2N7002W -G (N-Channel). RoHS Device. MOSFET. Features. - High density cell design for low RDS(ON). - Voltage controlled small signal switch. - Rugged and The UTC 2N7002W uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for 2N7002W . ELECTRICAL CHARACTERISTICS. VDD. VOUT. VIN. RG. RL. Switching. Test Circuit. Gate Charge. Test Circuit. VDD. VGS. RG. RL. 1mA. retemaraP.
| Part Number | 2N7002W |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | NEC Electronics Inc |
| Description | MOSFET N-CH 60V 115MA SOT-323 |
| Series | - |
| Packaging | Tape & Reel (TR) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 115mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 200mW (Ta) |
| Rds On (Max) @ Id, Vgs | 7.5 Ohm @ 50mA, 5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-323 |
| Package / Case | SC-70, SOT-323 |
| Image |  |
2N7002W
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